Crystal Electron Scanning. Breaking NAND step layers for data retrieval bypassing security layers.

Crystal electron scanning. Useful for reading through a solid material such as solid state drives. Breaking NAND step layers for data retrieval bypassing security layers. 

Likely nothing to come from this. Just stretching. 

Attempt one:

Knowing the distance between the crystal structure (as long as there is any space) of the silicon chip being read you send a series of beam of electrons at different speeds and angles to find the shape of the resulting crystal structure within and the alternating sections that determines the value of a one or a zero and if the atoms accepts an electron number or bounces off an electron tells you whether it’s used or empty and which state it’s in. If you  predetermine the atoms that can be interacted with without changing the state corrupting the data means you can read any drives data as ones and zeros by scanning through it and then compile from an algorithm collects the results. The issue is getting the bounce/scatter patterns of the electrons coming out the casing. Since they have drains it doesn’t matter. You could send in an electron into open gates of an off system and behind it switch to a sing atom n-type and pull it back out. Bounces determine closed. Open need to be cleared out so they don’t change state on power on. Or does adding power change their state. 

Perhaps at first it would be best to do it one beam at a time to determine its refraction. Then again and again and cross piling when the same chains appear until you have a set of data and then link larger chains together. I’m sure that’s basic just fragment recovery. 

This would work with NAND flash gates because the electrons that bounce off the pipes that are closed would tell you one state. 

The problem is to send electrons to the pipes without closing other pipes changing the data. 

Oh. They close 

So if power on. Closed tubes bounce off. One state. 

Open tubes would need to be bounced through so that the distance between the two electrons is an empty value and it doesn’t close as a value but stays open. 

Gate closed. Zero. 

Gate open. One. 

2nd gate holes Gate and has electron pass into it and is held between two larger Gates as a one when shut off. 

Attempt two:

First you would copy the drive as it is. Safely. 

Assuming it’s on. 

But if you’re bouncing through a crystal at the atomic level perhaps you can make a gate interaction that shoots an electron into the now open gate forcing identification, collided with the miniature gate, and forces it against the word gate to a new position to be read above it—and spaces an electron behind it so that it’s replaced. 

Or you could splice the layers of the flash memory into plates of their crystal and have a reversed floating gate of attractive material and you just pump the true float gate so that the electrons pass through the control gate to the reversed float gate. 

Reverse this with n-type to pull the produced electrons. Pumped by p-type to power the n-type attraction. 

IMG_1566.png

You would know the electron make ups of the os’s. Directories could be determined. You would know file types. Then eventual names of files and the content could be recreated without needing to login. 

You just need to n-type the assembly above the control gate and take those electrons from the word line. 

You could overload the p-type from below with electrons and force the information upward to a collection point of n-types. Warp the gates until you get the wordline played with. 

It depends on whether you’re wanted to affect pure gates or the system above them. But inserting a layer between the cells and the gates and then collecting 1/0 data through bounce back, travel through and then removal, may get you any information you want. Hard drives must logically break types of data in sections within their write areas to access them faster. The os directories would force them too. Or perhaps it’s still fragmented which makes it harder. 

You would do it in a read order so that the on gates wouldn’t know they had been intercepted or corrupt data since the device is off. 

How NAND layers are stepped:

Stairstep-Challenges.jpeg
….

So you would intercept those connections, split the layers, and run your electron interceptions. It may be as simple as a bath of dissolvents that break up polysilicon bonds. 

Or:

My all element print head could do both this jobs creation and separation since the second head type is one atom wide. It would reduce waste too. Plus you could get any lattice you want. You wouldn’t need to fill the chip to get the wordline on top. You could direct lines saving material per build. 

Citing:

https://www.explainthatstuff.com/flashmemory.html

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